Description
7 Signal Assignments 10 Signal Descriptions 14 Memory Organization 17
Memory Configuration 17 Uniform Block Memory Map, x16
64Mb Density 17 Uniform Block Memory Map, x8
64Mb Density 17 Bus Operations 18 Read 18 Write 18 Standby and Automatic Standby 18 Output Disable 18 Status Register 19 Data Polling Bit (DQ7) 19 Toggle Bit (DQ6) 19 Error Bit (DQ5) 19 Erase Timer Bit (DQ3) 20 Alternative Toggle Bit (DQ2) 20 Write to Buffer and Program Abort Bit (DQ1) 20 RE
Features
- Parallel NOR Flash Embedded Memory
M29W640GH, M29W640GL M29W640GT, M29W640GB
Features.
- Supply voltage.
- VCC = 2.7.
- 3.6V (program, erase, read).
- VPP = 12V for fast program (optional).
- Asynchronous random/page read.
- Page width: 4 words.
- Page access: 25ns.
- Random access: 60ns, 70ns, 90ns.
- Fast program commands.
- 2-word/4-byte program (without VPP = 12V).
- 4-word/8-byte program (with VPP = 12V).
- 1.