MT47H64M4 - (MT47HxxMx) DDR2 SDRAM

Product Overview

Micron Technology

Part number	MT47H64M4
Manufacturer	Micron Technology
File Size	6.81 MB
Description	(MT47HxxMx) DDR2 SDRAM
Datasheet	MT47H64M4 Datasheet
Additional preview pages of the MT47H64M4 datasheet.

. . .

VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 configuration DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Programmable CAS Latency (CL): 3 and 4 Posted CAS addi.

📁 Similar Datasheet

Other Datasheets by Micron Technology

Published: Sep 7, 2007 |