MT41K512M16 - 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM

Micron Technology

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Datasheet Details

Part number	MT41K512M16
Manufacturer	Micron Technology
File Size	436.56 KB
Description	32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
Datasheet	MT41K512M16-MicronTechnology.pdf

MT41K512M16 Product details

Description

TwinDie™ 1.35V DDR3L-RS SDRAM MT41K512M16 32 Meg x 16 x 8 Banks Description The 8Gb (TwinDie™) 1.35V DDR3L-RS SDRAM is a low-current self refresh version, via a TCSR feature, of the 1.35V DDR3L SDRAM device.It uses two Micron 4Gb DDR3L-RS SDRAM x16 die for essentially two ranks of 4Gb DDR3L-RS SDRAM.Unless stated otherwise, the DDR3L-RS meets the functional and timing specifications listed in the equivalent density DDR3L SDRAM data sheets.Refer to Micron’s 4Gb DDR3L SDRAM data shee

Features

Uses two 4Gb x16 Micron die in one package.
Two ranks (includes dual CS#, ODT, CKE and ZQ balls).
VDD = V DDQ = 1.35V (1.283.
1.425V); backward compatible to 1.5V operation.
1.35V center-terminated push/pull I/O.
JEDEC-standard ball-out.
Low-profile package.
TC of 0°C to 95°C.
0°C to 85°C: 8192 refresh cycles in 64ms.
85°C to 95°C: 8192 refresh cycles in 32ms.
Temperature-compensated self refresh (T.

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Published: Jun 10, 2014 |