Datasheet4U Logo Datasheet4U.com

MT29F8G08FABWP - 8Gb x8/x16 Multiplexed NAND Flash Memory

Download the MT29F8G08FABWP datasheet PDF. This datasheet also covers the MT29F4G08BABWP variant, as both devices belong to the same 8gb x8/x16 multiplexed nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

.

.

Features

  • NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features.
  • Organization:.
  • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words).
  • Block size: 64 pages (128K + 4K bytes).
  • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks.
  • Read performance:.
  • Random read: 25µs.
  • Sequential read: 30ns (3V x8 only).
  • Write performance:.
  • Page program:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT29F4G08BABWP_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MT29F8G08AAAC4 NAND Flash Memory Micron
MT29F8G08AAAC6 NAND Flash Memory Micron
MT29F8G08AAAWP NAND Flash Memory Micron
MT29F8G08ABABA NAND Flash Memory Micron
MT29F8G08ABABAWP-AAT Automotive Asynchronous NAND Flash Memory Micron

Other Datasheets by Micron Technology

Part Number Description
MT29F8G08FACWP NAND Flash Memory
MT29F1G01AAADD 1Gb x1: SPI NAND Flash Memory
MT29F1G08AACH4 NAND Flash Memory
MT29F1G08AACWP NAND Flash Memory
MT29F1G08ABADAH4 NAND Flash Memory

Full PDF Text Transcription

Click to expand full text
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • Read performance: • Random read: 25µs • Sequential read: 30ns (3V x8 only) • Write performance: • Page program: 300µs (TYP) • Block erase: 2ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • Data retention: 10 years • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 2.7V–3.
Published: |