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MT29F4G16BABWP - 8Gb x8/x16 Multiplexed NAND Flash Memory

Download the MT29F4G16BABWP datasheet PDF (MT29F4G08BABWP included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 8gb x8/x16 multiplexed nand flash memory.

Description

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Features

  • NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features.
  • Organization:.
  • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words).
  • Block size: 64 pages (128K + 4K bytes).
  • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks.
  • Read performance:.
  • Random read: 25µs.
  • Sequential read: 30ns (3V x8 only).
  • Write performance:.
  • Page program:.

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Note: The manufacturer provides a single datasheet file (MT29F4G08BABWP_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • Read performance: • Random read: 25µs • Sequential read: 30ns (3V x8 only) • Write performance: • Page program: 300µs (TYP) • Block erase: 2ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • Data retention: 10 years • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 2.7V–3.
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