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SST38VF6404 - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus

Download the SST38VF6404 datasheet PDF (SST38VF6401 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 64 mbit (x16) advanced multi-purpose flash plus.

Features

  • Organized as 4M x16.
  • Single Voltage Read and Write Operations.
  • 2.7-3.6V.
  • Superior Reliability.
  • Endurance: 100,000 Cycles minimum.
  • Greater than 100 years Data Retention3.
  • Low Power Consumption (typical values at 5 MHz).
  • Active Current: 4 mA (typical).
  • Standby Curre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SST38VF6401-Microchip.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microchip
  • SST38VF6404B - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
  • SST38VF6401 - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
  • SST38VF6401B - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
  • SST38VF6402 - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
  • SST38VF6402B - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
  • SST38VF6403 - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
  • SST38VF6403B - 64 Mbit (x16) Advanced Multi-Purpose Flash Plus
  • SST39LF401C - 4 Mbit (x16) Multi-Purpose Flash Plus

Full PDF Text Transcription

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Not recommended for new designs. Please use SST38VF6401B/6402B/6403B/64040B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 Not Recommended for New Designs The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401/6402/6403/6404 write (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Features • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.
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