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MSC360SMA120S - N-Channel Power MOSFET

Features

  • The following are key features of the MSC360SMA120S device:.
  • Low capacitances and low gate charge.
  • Fast switching speed due to low internal gate resistance (ESR).
  • Stable operation at high junction temperature, TJ(max) = 175 °C.
  • Fast and reliable body diode.
  • Superior avalanche ruggedness.
  • RoHS compliant Benefits The following are benefits of the MSC360SMA120S device:.
  • High efficiency to enable lighter, more compact system.
  • Si.

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Full PDF Text Transcription

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MSC360SMA120S 1200 V, 360 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC360SMA120S device is a 1200 V, 360 mΩ SiC MOSFET in a TO-268 (D3PAK) package.
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