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MRH10N22U3SR - Preliminary 100V N-Channel Radiation-Hardened MOSFET

Features

  • Low RDS(on).
  • Fast Switching.
  • Single Event Hardened.
  • Low Gate Charge.
  • Simple Drive.
  • Ease Of Paralleling.
  • Hermetically Sealed.
  • Surface Mount.
  • Ceramic Package Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00005109A - 1.

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Datasheet Details

Part number MRH10N22U3SR
Manufacturer Microchip
File Size 231.20 KB
Description Preliminary 100V N-Channel Radiation-Hardened MOSFET
Datasheet download datasheet MRH10N22U3SR Datasheet

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Preliminary 100V N-Channel Radiation-Hardened MOSFET MRH10N22U3SR/JANSR2N7587U3 Product Overview MRH10N22U3SR 150°C, 100V, 19A, N-CHANNEL 2N7587 100V 22A B5498-1 Microchip’s new M6™ technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Ionizing Dose (TID) and Single Event environments (SEE). M6™ performs in extreme-environment applications and remains within specification in radiation environments up to 300 Krad TID. Figure 1.
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