DS1245AB, DS1245Y Datasheet (Maxim Integrated)

DS1245AB, DS1245Y, 1024k Nonvolatile SRAM

A0 - A16 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) - Ground NC - No Connect 1 of 10 DS1245Y/AB DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131

DS1245AB Features

* 10 years minimum data retention in the absence of external power

* Data is automatically protected during power loss

* Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory

* Unlimited write cycles

* Low-power CMOS

* Read and write access times of 70 ns

* Lithiu