Description
A0-A12
- Address Inputs
DQ0-DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE VCC GND NC
- Output Enable - Power (+5V) - Ground - No Connect
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits.Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.When such a condition occurs, the lithium energy source is automatically sw
Features
- 10 years minimum data retention in the
absence of external power.
- Data is automatically protected during power
loss.
- Directly replaces 8k x 8 volatile static RAM
or EEPROM.
- Unlimited write cycles.
- Low-power CMOS.
- JEDEC standard 28-pin DIP package.
- Read and write access times of 70 ns.
- Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time.
- Full ±10% VCC operating range (DS1225AD).
- Optiona.