Description
A0
A16
- Address Inputs
DQ0
DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
RST - Reset Output
BW - Battery Warning Output
VCC GND
- Power (+5V) - Ground
NC - No Connect
DESCRIPTION
The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits.Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.When su
Features
- 10 years minimum data retention in the
absence of external power.
- Data is automatically protected during power
loss.
- Power supply monitor resets processor when
VCC power loss occurs and holds processor in reset during VCC ramp-up.
- Battery monitor checks remaining capacity
daily.
- Read and write access times of 70ns.
- Unlimited write cycle endurance.
- Typical standby current 50µA.
- Upgrade for 128k x 8 SRAM, EEPROM or
Flash.
- Lithium battery is electricall.