Download the MEBSS84-G datasheet PDF.
This datasheet also covers the MEBSS84 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
Features
- The MEBSS84 is the P-Channel logic enhancement mode power.
- RDS(ON)≦5Ω@VGS=-10V
field effect transistors are produced using high cell density, DMOS.
- RDS(ON)≦6Ω@VGS=-5V
trench technology. This high density process is especially tailored to.
- Super high density cell design for extremely low RDS(ON)
minimize on-state resistance. These devices are particularly suited.
- Exceptional on-resistance and maximum DC current
for low voltage.