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MEBSS84-G - P-Channel MOSFET

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Matsuki

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MEBSS84-G P-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – MEBSS84-G

Datasheet Details

Part number	MEBSS84-G
Manufacturer	Matsuki
File Size	925.87 KB
Description	P-Channel MOSFET
Datasheet	MEBSS84-G Datasheet
Note	This datasheet PDF includes multiple part numbers: MEBSS84-G, MEBSS84. Please refer to the document for exact specifications by model.
Additional preview pages of the MEBSS84-G datasheet.

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Features

The MEBSS84 is the P-Channel logic enhancement mode power.
RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS.
RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to.
Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
Exceptional on-resistance and maximum DC current for low voltage.

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Published: Mar 20, 2018 |