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MEBSS84-G - P-Channel MOSFET

Download the MEBSS84-G datasheet PDF. This datasheet also covers the MEBSS84 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • The MEBSS84 is the P-Channel logic enhancement mode power.
  • RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS.
  • RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to.
  • Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
  • Exceptional on-resistance and maximum DC current for low voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MEBSS84-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MEBSS84-G
Manufacturer Matsuki
File Size 925.87 KB
Description P-Channel MOSFET
Datasheet download datasheet MEBSS84-G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MEBSS84/ MEBSS84-G P-Channel 50V Enhancement Mode Mosfet GMENOESRFAELT DESCRIPTION FEATURES The MEBSS84 is the P-Channel logic enhancement mode power ● RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
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