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MEBSS138 - N-Channel MOSFET

Description

The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦3Ω@VGS=10V.
  • RDS(ON)≦3.5Ω@VGS=5V.
  • RDS(ON)≦7Ω@VGS=2.75V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number MEBSS138
Manufacturer Matsuki
File Size 685.46 KB
Description N-Channel MOSFET
Datasheet download datasheet MEBSS138 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MEBSS138/MEBSS138-G N - Channel 50V (D-S) MOSFET GENERAL DESCRIPTION The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦3.5Ω@VGS=5V ● RDS(ON)≦7Ω@VGS=2.
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