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ME7835 - P-Channel MOSFET

Description

The ME7835 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦18mΩ@VGS=-10V.
  • RDS(ON) ≦36mΩ@VGS=-4.5V.

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Datasheet Details

Part number ME7835
Manufacturer Matsuki
File Size 1.46 MB
Description P-Channel MOSFET
Datasheet download datasheet ME7835 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME7835 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. ME7835/ME7835-G FEATURES ● RDS(ON) ≦18mΩ@VGS=-10V ● RDS(ON) ≦36mΩ@VGS=-4.5V APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (DFN 3.3x3.