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ME4956-G - N- & P-Channel MOSFET

Product Overview

Matsuki

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ME4956-G N- & P-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME4956-G

Datasheet Details

Part number	ME4956-G
Manufacturer	Matsuki
File Size	1.41 MB
Description	N- & P-Channel MOSFET
Datasheet	ME4956-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME4956-G, ME4956. Please refer to the document for exact specifications by model.
Additional preview pages of the ME4956-G datasheet.

Product details

Description

The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON)≦116mΩ@VGS=10V (N-Ch).
RDS(ON)≦133mΩ@VGS=4.5V (N-Ch).
RDS(ON)≦215mΩ@VGS=-10V (P-Ch).
RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch).
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Other Datasheets by Matsuki

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Published: Mar 22, 2018 |