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ME3587 - N- & P-Channel 20V (D-S) MOSFET

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Matsuki

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ME3587 N- & P-Channel 20V (D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME3587

Datasheet Details

Part number	ME3587
Manufacturer	Matsuki
File Size	1.21 MB
Description	N- & P-Channel 20V (D-S) MOSFET
Datasheet	ME3587 Datasheet
Additional preview pages of the ME3587 datasheet.

Product details

Description

The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch).
RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch).
RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch).
RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch).
RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch).
RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch).
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |