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ME2N7002F1KW-G - Dual N-Channel MOSFET

Download the ME2N7002F1KW-G datasheet PDF. This datasheet also covers the ME2N7002F1KW variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦8Ω@VGS=4V.
  • RDS(ON)≦13Ω@VGS=2.5V.
  • ESD Protection HBM 1KV.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME2N7002F1KW-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2N7002F1KW-G
Manufacturer Matsuki
File Size 903.77 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME2N7002F1KW-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME2N7002F1KW Dual N-Channel MOSFET
ME2N7002F1W N-Channel MOSFET
ME2N7002F1W-G N-Channel MOSFET
ME2N7002F N-Channel MOSFET
ME2N7002F-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.
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