Datasheet4U.com

ME2304 - N-Channel Enhancement MOSFET

Product Overview

Matsuki

📥 Download Datasheet

ME2304 N-Channel Enhancement MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2304

Datasheet Details

Part number	ME2304
Manufacturer	Matsuki
File Size	1.35 MB
Description	N-Channel Enhancement MOSFET
Datasheet	ME2304 Datasheet
Additional preview pages of the ME2304 datasheet.

Product details

Description

The ME2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON) ≦117mΩ@VGS=10V.
RDS(ON) ≦190mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📁 Similar Datasheet

ME2301D - P-Channel MOSFET (VBsemi)
ME2303 - P-Channel MOSFET (VBsemi)
ME2305 - P-Channel MOSFET (HAOHAI)
ME2306 - N-Channel MOSFET (VBsemi)
ME2323D - P-Channel MOSFET (VBsemi)
ME2324D - N-Channel MOSFET (VBsemi)
ME2325 - P-Channel 30V MOSFET (VBsemi)
ME2345A - P-Channel MOSFET (VBsemi)

Other Datasheets by Matsuki

ME2304-G - N-Channel Enhancement MOSFET
ME2301 - P-Channel Enhancement Mode Mosfet
ME2301-G - P-Channel Enhancement Mode Mosfet
ME2301A - P-Channel 20V (D-S) MOSFET
ME2301A-G - P-Channel 20V (D-S) MOSFET
ME2301DC - P-Channel 20V (D-S) MOSFET

Published: Mar 20, 2018 |