ME2301GC Datasheet (Matsuki) - P-Channel 20V (D-S) MOSFET

ME2301GC, P-Channel 20V (D-S) MOSFET

The ME2301GC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

ME2301GC Features

* RDS(ON) ≦75mΩ@VGS=-4.5V

* RDS(ON) ≦95mΩ@VGS=-2.5V

* RDS(ON) ≦130mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment