ME16P10-G - P-Channel 100V (D-S) MOSFET

Product Overview

Matsuki

Part number	ME16P10-G
Manufacturer	Matsuki
File Size	1.05 MB
Description	P-Channel 100V (D-S) MOSFET
Datasheet	ME16P10-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME16P10-G, ME16P10. Please refer to the document for exact specifications by model.
Additional preview pages of the ME16P10-G datasheet.

The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

RDS(ON)≦195mΩ@VGS=-10V.
RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to.
Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
Exceptional on-resistance and maximum DC current for low voltage.

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Published: Mar 20, 2018 |