SLP7N65S - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLP7N65S
Manufacturer	Maple Semiconductor
File Size	495.53 KB
Description	N-Channel MOSFET
Datasheet	SLP7N65S-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 TO-220F G GDS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sin.

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Published: Dec 28, 2018 |