SLP10N80CZ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLP10N80CZ
Manufacturer	Maple Semiconductor
File Size	397.39 KB
Description	N-Channel MOSFET
Datasheet	SLP10N80CZ-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLP10N80CZ SLF10N80CZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100.

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Published: Apr 11, 2017 |