Description
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
Features
- - 32A, 200V, RDS(on) typ. = 0.080Ω@VGS = 10 V - Low gate charge ( typical 50 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP32N20C SLF32N20C
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Single.
SLF32N20C-MapleSemiconductor.pdf
