MSB120N08G - 80V N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	MSB120N08G
Manufacturer	Maple Semiconductor
File Size	758.38 KB
Description	80V N-Channel MOSFET
Datasheet	MSB120N08G-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced technology.

- 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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Published: Dec 27, 2018 |