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MMD80R900QZ - N-channel MOSFET

Description

MMD80R900QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Features

  • Low Power Loss by High Speed Switching and Low On-Resistance.
  • Excellent ESD robustness.
  • 100% Avalanche Tested.
  • Green Package.
  • Pb Free Plating, Halogen Free.

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Datasheet Details

Part number MMD80R900QZ
Manufacturer MagnaChip
File Size 1.24 MB
Description N-channel MOSFET
Datasheet download datasheet MMD80R900QZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMD80R900QZ Datasheet MMD80R900QZ 800V 0.90Ω N-channel MOSFET  Description MMD80R900QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VGS(th),typ ID Qg,typ Value 850 0.90 3.
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