MDV5524 - Dual N-Channel Trench MOSFET

Product Overview

MagnaChip

Datasheet Details

Part number	MDV5524
Manufacturer	MagnaChip
File Size	1.51 MB
Description	Dual N-Channel Trench MOSFET
Datasheet	MDV5524 Datasheet
Additional preview pages of the MDV5524 datasheet.

Product details

Description

The MDV5524 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

FET1 FET2  VDS = 30V  ID = 24.5A VDS = 30V ID = 31.2A @VGS = 10V  RDS(ON) < 14.4mΩ < 21.3mΩ < 12.6mΩ @VGS = 10V < 15.6mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested S2 5 S2 6 S2 7 G2 8 S1/D2 D1 D14D13D12G11 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25oC TA=70o.

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Published: Apr 10, 2017 |