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MDU06N110 - N-Channel MOSFET

Description

The MDU06N110 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU06N110 is suitable device for Synchronous Rectification For Server and general purpose applications.

Features

  •  VDS = 60V  ID = 52A @VGS = 10V  RDS(ON) < 11.0 mΩ @VGS = 10V  100% UIL Tested DD DD DD DD D S SSG GS SS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junct.

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Datasheet Details

Part number MDU06N110
Manufacturer MagnaChip
File Size 933.63 KB
Description N-Channel MOSFET
Datasheet download datasheet MDU06N110 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU06N110 – Single N-Channel Trench MOSFET 60V MDU06N110 Single N-channel Trench MOSFET 60V, 52A, 11.0mΩ ㄹ General Description The MDU06N110 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU06N110 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 60V  ID = 52A @VGS = 10V  RDS(ON) < 11.
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