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MDQ20N116PTTH - N-Channel MOSFET

Features

  • Trench Power MOSFET technology.
  • N-channel, normal level.
  • Enhanced avalanche ruggedness.
  • 100% UIS and Rg tested.
  • Maximum 175°C junction temperature.

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Datasheet Details

Part number MDQ20N116PTTH
Manufacturer MagnaChip
File Size 668.27 KB
Description N-Channel MOSFET
Datasheet download datasheet MDQ20N116PTTH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Magnachip Power Technology MDQ20N116PTTH MDQ20N116PTTH Single N-channel Trench MOSFET 200V 11.6mΩ 95A FEATURES • Trench Power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Battery powered systems KEY PERFORMANCE PARAMETERS VDS RDS(on), typ. ID 200 V 0.0106 Ω 95 A QG, typ. Junction temperature, max. 83 nC 175 oC TO-247 G DS Top View S DG D G S ORDERING INFORMATION Type / Ordering Code MDQ20N116PTTH Package TO-247 http://www.magnachip.com/ Marking MDQ20N116 Packing Tube RoHS Status Halogen Free December. 2022. ver. 1.
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