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MDP1922 - Single N-channel MOSFET

Description

The MDP1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDP1922 is suitable device for DC/DC Converter and general purpose applications.

Features

  •  VDS = 100V  ID = 97A @VGS = 10V  RDS(ON) < 8.4 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D GDS TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC TC=100oC Power Dissipation Single Pulse Avalanche Energy TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance,.

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Datasheet Details

Part number MDP1922
Manufacturer MagnaChip
File Size 1.02 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDP1922 Datasheet

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Full PDF Text Transcription

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MDP1922– Single N-Channel Trench MOSFET 100V MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4mΩ General Description The MDP1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1922 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 100V  ID = 97A @VGS = 10V  RDS(ON) < 8.
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