Description
The MDE08N054RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 80V
ID = 120 A @VGS = 10V
RDS(ON)
< 5.4 mΩ @VGS = 10V
175 oC operating temperature
100% UIL Tested
100% Rg Tested
100% △VDS Tested
D D
G S
TO-263
Absolute Maximum Ratings (TJ = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
TC=25oC (Silicon Limited)
Continuous Drain Current (1) Pulsed Drain Current (2)
TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC
Power Dissipation Single Pulse Avalanche Energy (3)
TC=25oC TC=100oC TA=25oC.
MDE08N054RH-MagnaChip.pdf
