Description
The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 100V
ID = 11A @VGS = 10V
RDS(ON)
< 120mΩ @VGS = 10V
< 135mΩ @VGS = 6.0V
D
G
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1)
TC=25oC TC=100oC
TC=25oC TC=100oC
S
Symbol VDSS VGSS ID IDM
PD TJ, Tstg.
MDD1903RH Datasheet
