MDD06N100 - N-Channel MOSFET

Product Overview

MagnaChip

Datasheet Details

Part number	MDD06N100
Manufacturer	MagnaChip
File Size	924.13 KB
Description	N-Channel MOSFET
Datasheet	MDD06N100 Datasheet
Additional preview pages of the MDD06N100 datasheet.

Product details

Description

The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

 VDS = 60V  ID = 50A @VGS = 10V  RDS(ON) < 10.0 mΩ @VGS = 10V  100% UIL Tested D Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal R.

📁 Similar Datasheet

MDD1051RH - N-Channel MOSFET (INCHANGE)
MDD1080-18N7 - Diode Modules (IXYS)
MDD1080-24N7 - Diode Modules (IXYS)
MDD1080-28N7 - Diode Modules (IXYS)
MDD110A - Ordinary rectifier module (KUNERJING)
MDD142-08N1 - Standard Rectifier (IXYS)
MDD142-12N1 - Standard Rectifier (IXYS)
MDD142-14N1 - Standard Rectifier (IXYS)

Other Datasheets by MagnaChip

MDD08N067RH - N-channel MOSFET
MDD1051 - Single N-channel MOSFET
MDD10N074RH - N-channel MOSFET
MDD14N25C - N-Channel MOSFET
MDD1501 - Single N-channel Trench MOSFET
MDD1502 - Single N-channel Trench MOSFET

Published: Apr 11, 2017 |