MBQ40T120QESTH - IGBT

Product Overview

MagnaChip

Datasheet Details

Part number	MBQ40T120QESTH
Manufacturer	MagnaChip
File Size	834.50 KB
Description	IGBT
Datasheet	MBQ40T120QESTH Datasheet
Additional preview pages of the MBQ40T120QESTH datasheet.

Product details

Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. Welder

Features

High Speed Switching & Low Power Loss.
VCE(sat) = 2.1V @ IC = 40A.
High Input Impedance.
trr = 285ns (typ. ).
Ultra-Soft, fast recovery anti-parallel diode.
Ultra-narrowed VF distribution control.
Positive Temperature coefficient for easy paralleling TO-247.
G : Gate.
C : Collector.
E : Emitter GC E Absolute Maximum Ratings Package outline and symbol Characteristics Collector-emitter voltage Gate-emitter voltage DC collector current, limited.

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Published: Jan 11, 2022 |