Description
This N-Channel MOSFET is produced using mos-tech Semiconductor’s adcanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
Continuous Cont
Features
- RDS(on) = 3mΩ ( Typ. )@ VGS = 10V, ID = 75A.
- Fast switching speed.
- Low gate charge.
- High performance trench technology for extremely low RDS(on).
- High power and current handling capability.
- RoHS compliant.