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MSN08B1K - N-Channel MOSFET

Features

  • VDS = 75V,ID =110A RDS(ON) < 9mΩ @ VGS=10V (Typ:7.5mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number MSN08B1K
Manufacturer MORESEMI
File Size 480.17 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN08B1K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN08B1K 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =110A RDS(ON) < 9mΩ @ VGS=10V (Typ:7.
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