PSU8GA30AT Datasheet (MIRA) - 3.3V 8Gb SLC NAND Flash Memory

PSU8GA30AT, 3.3V 8Gb SLC NAND Flash Memory

Date 0.1 Initial draft February 22, 2011 Revise Copy-Back Program Operation 1.0 with Random Data Input diagram June 30, 2011 Remark Preliminary Preliminary Deutron Confidential  2011 Deuteron Electronics Corp.

Page 3/61 PSU8GA30AT NAND Flash Memory PSU8GA30AT (1G x

PSU8GA30AT NAND Flash Memory 3.3V 8Gb SLC NAND Flash Memory Specification and Technical Notes Part Number PSU8GA30AT Cell SLC PSU8GA30AT Density 8G Organization X8 Vcc 2.7V~3.6V PKG Type TSOP I Deutron Confidential  2011 Deuteron Electronics Corp.

Page 1/61 PSU8GA30AT Revision 1.0 June 30, 2011 NAND Flash Memory Deutron Confidential  2011 Deuteron Electronics Corp.

Page 2/61 PSU8GA30AT NAND Flash Memory Document Title PSU8GA30AT (1G

PSU8GA30AT Features

* Voltage Supply: 2.7 V ~ 3.6V

* Organization

* Fast Write Cycle Time - Program time: 300us (Typ.) - Memory Cell Array: (4K + 218) x 256K x 8bit - Block Erase time: 2.5ms (Typ.) - Data Register: (4K + 218) x 8bit

* Automatic Program and Erase

* Command/Address/Data Multiple