MY025DBNE5 - 60V Dual N-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	MY025DBNE5
Manufacturer	MAOYUAN
File Size	1.50 MB
Description	60V Dual N-Channel Enhancement Mode MOSFET
Datasheet	MY025DBNE5 Datasheet
Additional preview pages of the MY025DBNE5 datasheet.

Product details

Description

The MY025DBNE5 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Battery protection Load switch Uninterruptible power supply G2S2 S2 S2 G1S1S1 S1

Features

VDSS 60 V ID 10 A PD(TA=25℃) 2 W RDS(ON)(atVGS =10V) 25 mΩ D1 D2 G1 PIN1 G2 S1 S2 Package Marking and Ordering Information Product ID Pack MY025DBNE5 PDFN5.
6-8L Marking 10B06D Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Am.

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Published: Jul 20, 2025 |