UF2820P Datasheet (MACOM) - RF Power MOSFET Transistor

UF2820P, RF Power MOSFET Transistor

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UF2820P Features

* N-channel enhancement mode device

* DMOS structure

* Lower capacitances for broadband operation

* Common source configuration

* Lower noise floor Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Ga