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MSWSE-005-15 - Silicon PIN Diode Switch Element

Download the MSWSE-005-15 datasheet PDF. This datasheet also covers the MSWSE-005-15-MA variant, as both devices belong to the same silicon pin diode switch element family and are provided as variant models within a single manufacturer datasheet.

Description

The MSWSE-005-15 is a PIN diode SPST switch element designed for medium incident power applications up to 4 W CW.

It has low insertion loss and medium isolation below 6 GHz.

Rev.

Features

  • Small Size (50 x 30 mils).
  • Broadband Performance up to 6 GHz.
  • Supports up to 4 W Power when Cold Switched.
  • Low Insertion Loss: 0.5 dB.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSWSE-005-15-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MSWSE-005-15 Silicon PIN Diode Switch Element Aeroflex
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MSWSE-010-15S Silicon PIN Diode Switch Element Aeroflex
MSWSE-020-05 Silicon PIN Diode Switch Element Aeroflex

Other Datasheets by MACOM Technology Solutions

Part Number Description
MSWSE-010-15S Silicon PIN Diode Switch Element
MSWSE-020-05 Silicon PIN Diode Switch Element
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MSWSE-044-10 Silicon PIN Diode Switch Element
MSWSE-050-17 Silicon SPST PIN Diode Switch Element

Full PDF Text Transcription

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MSWSE-005-15 Silicon PIN Diode Switch Element Features  Small Size (50 x 30 mils)  Broadband Performance up to 6 GHz  Supports up to 4 W Power when Cold Switched  Low Insertion Loss: 0.5 dB  RoHS* Compliant Description The MSWSE-005-15 is a PIN diode SPST switch element designed for medium incident power applications up to 4 W CW. It has low insertion loss and medium isolation below 6 GHz. Rev. V1 Electrical Specifications: TA = +25°C Parameter Test Conditions Breakdown Voltage IR = 10 µA Forward Voltage IF = 50 mA Junction Capacitance VR = 50 V, 1 MHz Total Capacitance Series Resistance Lifetime Insertion Loss Isolation I-Layer VR = 50 V, 1 MHz IF = 30 mA, 500 MHz IF = 100 mA, 500 MHz IF = 10 mA, IR = 6 mA , 50% IF = 50 mA, <2.7 GHz IF = 50 mA, <6.0 GHz VR = 50 V, <2.
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