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MSS60-148-B10B - Extra High Barrier Silicon Schottky Diodes

Download the MSS60-148-B10B datasheet PDF. This datasheet also covers the MSS60-144-B10B-MA variant, as both devices belong to the same extra high barrier silicon schottky diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.

Rev.

Features

  • VF, RD and CJ Matching Options.
  • Chip, Beam Lead and Packaged Devices.
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSS60-144-B10B-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MSS60-148-E25 Extra High Barrier Silicon Schottky Diodes
MSS60-148-H20 Extra High Barrier Silicon Schottky Diodes
MSS60-144-B10B Extra High Barrier Silicon Schottky Diodes
MSS60-144-E25 Extra High Barrier Silicon Schottky Diodes
MSS60-144-H20 Extra High Barrier Silicon Schottky Diodes

Full PDF Text Transcription

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MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ.
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