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MSS40-148-B10B - Medium Barrier Silicon Schottky Diodes

Download the MSS40-148-B10B datasheet PDF (MSS40-045-C15-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for medium barrier silicon schottky diodes.

Description

The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode.

Rev.

Features

  • VF, RD and CJ Matching Options.
  • Chip, Beam Lead and Packaged Devices.
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSS40-045-C15-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS40-045-C15 Single Junction VF Typ. V 0.42 MSS40-048-C15 Single Junction 0.40 Test Conditions IF = 1 mA VBR Min. V 3 CJ Typ. / Max. pF 0.09 / 0.12 3 0.12 / 0.15 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 7 7 RD Max. Ω 15 15 I = 5 mA FCO Typ.
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