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MAGX-000035-01000S, MAGX-000035-010000-MA Datasheet - MA-COM

MAGX-000035-01000S, MAGX-000035-010000-MA, Power Transistor

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz
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Features

*  GaN Depletion-Mode HEMT Microwave Transistor
*  Common-Source configuration
*  No internal matching
*  Broadband Class AB operation
*  RoHS
* Compliant
*  +50 V Typical Operation

Applications

* Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic

MAGX-000035-010000-MA-COM.pdf

This datasheet PDF includes multiple part numbers: MAGX-000035-01000S, MAGX-000035-010000-MA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MAGX-000035-01000S, MAGX-000035-010000-MA

Manufacturer:

MA-COM

File Size:

585.07 KB

Description:

Power transistor.

Note:

This datasheet PDF includes multiple part numbers: MAGX-000035-01000S, MAGX-000035-010000-MA.
Please refer to the document for exact specifications by model.

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