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MA4P274ST-287T - PIN / NIP Diode Chips

Download the MA4P274ST-287T datasheet PDF. This datasheet also covers the MA4P7436-MA variant, as both devices belong to the same pin / nip diode chips family and are provided as variant models within a single manufacturer datasheet.

Description

MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN/NIP diode chips which use ceramic glass and silicon nitride passivation technology.

The silicon PIN/NIP chip series of devices cover a broad spectrum of performance requirements for control circuit applications.

Features

  • Switch & Attenuator Die.
  • Extensive Selection of I-Region Lengths.
  • Hermetic.
  • Glass Passivated Cermachip.
  • Oxide Passivated Planar Chips.
  • Voltage Ratings to 3000 V.
  • Fast Switching Speed.
  • Low Loss.
  • High Isolation.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4P7436-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MA4P274-1225T PIN / NIP Diode Chips
MA4P274CK-1146T PIN / NIP Diode Chips
MA4P275-287T PIN / NIP Diode Chips
MA4P275CK-1146T PIN / NIP Diode Chips
MA4P275ST-287T PIN / NIP Diode Chips

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon PIN / NIP Diode Chips Features • Switch & Attenuator Die • Extensive Selection of I-Region Lengths • Hermetic • Glass Passivated Cermachip • Oxide Passivated Planar Chips • Voltage Ratings to 3000 V • Fast Switching Speed • Low Loss • High Isolation • RoHS* Compliant Description MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN/NIP diode chips which use ceramic glass and silicon nitride passivation technology. The silicon PIN/NIP chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages.
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