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2N6676 - NPN High Power Silicon Transistor

Download the 2N6676 datasheet PDF (2N6676-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn high power silicon transistor.

Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538.
  • TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6676-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by MA-COM
  • 2N6674 - NPN High Power Silicon Transistor
  • 2N6675 - NPN High Power Silicon Transistor
  • 2N6678 - NPN High Power Silicon Transistor
  • 2N6193 - PNP Power Silicon Transistor
  • 2N6193U3 - NPN Power Silicon Transistor
  • 2N6249 - NPN Darlington Power Silicon Transistor
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  • 2N6251 - NPN Darlington Power Silicon Transistor

Full PDF Text Transcription

Click to expand full text
2N6676 & 2N6678 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.
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