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2N2222UB - Radiation Hardened NPN Silicon Switching Transistors

Download the 2N2222UB datasheet PDF. This datasheet also covers the 2N2221A-MA variant, as both devices belong to the same radiation hardened npn silicon switching transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • Qualified to MIL-PRF-19500/255.
  • Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si).
  • TO-18 (TO-206AA), Surface mount UA & UB Packages.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N2221A-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by MACOM Technology Solutions

Part Number Description
2N2222UA Radiation Hardened NPN Silicon Switching Transistors
2N2222A Radiation Hardened NPN Silicon Switching Transistors
2N2222L Radiation Hardened NPN Silicon Switching Transistors
2N2221A Radiation Hardened NPN Silicon Switching Transistors
2N2221L Radiation Hardened NPN Silicon Switching Transistors

Full PDF Text Transcription

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2N2221A, L, UA, UB & 2N2222A, L, UA, UB Radiation Hardened NPN Silicon Switching Transistors Rev. V1 Features  Qualified to MIL-PRF-19500/255  Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si)  TO-18 (TO-206AA), Surface mount UA & UB Packages Applications  Switching and Linear Applications  DC and VHF Amplifier Applications Electrical Specifications @ TA = 25°C Parameter Test Conditions Symbol Units Minimum Maximum Off Characteristics: Collector - Emitter Breakdown IC = 10 mAdc V(BR)CEO Vdc 50 — Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = 75 Vdc VCB = 60 Vdc VEB = 6.0 Vdc VEB = 4.
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