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2N2221L - Radiation Hardened NPN Silicon Switching Transistors

Download the 2N2221L datasheet PDF (2N2221A-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for radiation hardened npn silicon switching transistors.

Features

  • Qualified to MIL-PRF-19500/255.
  • Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si).
  • TO-18 (TO-206AA), Surface mount UA & UB Packages.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N2221A-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MA-COM
  • 2N2221A - Radiation Hardened NPN Silicon Switching Transistors
  • 2N2221UA - Radiation Hardened NPN Silicon Switching Transistors
  • 2N2221UB - Radiation Hardened NPN Silicon Switching Transistors
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  • 2N2222UA - Radiation Hardened NPN Silicon Switching Transistors
  • 2N2222UB - Radiation Hardened NPN Silicon Switching Transistors
  • 2N2218 - NPN Switching Silicon Transistor

Full PDF Text Transcription

Click to expand full text
2N2221A, L, UA, UB & 2N2222A, L, UA, UB Radiation Hardened NPN Silicon Switching Transistors Rev. V1 Features  Qualified to MIL-PRF-19500/255  Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si)  TO-18 (TO-206AA), Surface mount UA & UB Packages Applications  Switching and Linear Applications  DC and VHF Amplifier Applications Electrical Specifications @ TA = 25°C Parameter Test Conditions Symbol Units Minimum Maximum Off Characteristics: Collector - Emitter Breakdown IC = 10 mAdc V(BR)CEO Vdc 50 — Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = 75 Vdc VCB = 60 Vdc VEB = 6.0 Vdc VEB = 4.
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