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1N4150-1 - Silicon Switching Diode

Download the 1N4150-1 datasheet PDF (1N4150-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon switching diode.

Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) TYPE # VBR IR = 10 μA VRWM 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4150-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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1N3600, 1N4150 & 1N4150-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) TYPE # VBR IR = 10 μA VRWM 1N3600 1N4150, -1 V dc 75 75 V (pk) 50 50 IR1 VR = 50 Vdc TA = 25°C μA dc 0.1 0.1 IR2 VR = 50 Vdc TA =150°C μA dc 100 100 C Trr IR = 0; f = 1 MHz IF = IR = 10 to 100 mA dc ac signal = 50 mV (p-P) RL = 100 Ω pF ns 2.5 4.0 2.5 4.
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