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MP4T80200 - NPN Transistor Medium Power

Download the MP4T80200 datasheet PDF (MP4T80200_M included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn transistor medium power.

Description

The MP4T80200 series of our medium power high gain npn transistor has a power output of 1.0 watts at 900 MHz when operated in a class C environment.

The typical applied voltage is from 6 to 10 volts, collector to emitter, with a 600mA max collector current.

Features

  • High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) B a se B o n d P a d E m itte r B o n d Pad MP4T80200 Die Outline MP4T80200.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MP4T80200_M-pulseMicrowave.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MP4T80200
Manufacturer M-pulse Microwave
File Size 170.52 KB
Description NPN Transistor Medium Power
Datasheet download datasheet MP4T80200 Datasheet
Other Datasheets by M-pulse Microwave

Full PDF Text Transcription

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M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features • • • High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) B a se B o n d P a d E m itte r B o n d Pad MP4T80200 Die Outline MP4T80200 Description The MP4T80200 series of our medium power high gain npn transistor has a power output of 1.0 watts at 900 MHz when operated in a class C environment. The typical applied voltage is from 6 to 10 volts, collector to emitter, with a 600mA max collector current. The MP4T802 family of transistors is available in chip (MP4T80200), 200mil BEO (MP4T802-510). B a lla s t R e s is to r s A c tiv e D e v ic e A reas (4) Die size = 450 X 750 uM Bottom of die is collector. www.DataSheet4U.
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