LPM3413 - P-Channel Enhancement Mode Field Effect Transistor

LPM3413 Description

Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General .
The LPM3413 uses advanced trench technology to provide excellent RDS(ON).

LPM3413 Features

* -20V/2.0A,RDS(ON) ≤130mΩ(max. )@VGS=-2.5V
* -20V/3A,RDS(ON) ≤95mΩ(max. )@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)

LPM3413 Applications

* Standard Product LPM3413 is Pb-free. LPM3413 is a Green Product ordering option. LPM3413 are electrically identical. Order Information LPM3413

📥 Download Datasheet

LPM3413 Datasheet Preview — Preview of LPM3413 PDF

Datasheet Details

Part number: LPM3413
Manufacturer: Lowpowersemi
File Size: 372.61 KB
Datasheet: LPM3413-Lowpowersemi.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor Lowpowersemi

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