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LSC11N60 - N-channel MOSFET

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Datasheet Details

Part number	LSC11N60
Manufacturer	Lonten
File Size	481.15 KB
Description	N-channel MOSFET
Datasheet	LSC11N60-Lonten.pdf

LSC11N60 Product details

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

Features

Ultra low Rdson.
Ultra low gate charge (typ. Qg = 34nC).
100% UIS tested.
RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Conti.

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Published: Mar 30, 2021 |