Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology.
Features
- Ultra low Rdson.
- Ultra low gate charge (typ. Qg = 34nC).
- 100% UIS tested.
- RoHS compliant
D G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1) Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C ) - Derate above 25°C
Operating and Storage Temperature Range
Conti.
LSC11N60-Lonten.pdf
